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  leshan radio company, ltd. 1/4 LBSS84WT1G 1 sot ?323 2 3 

 p?channel sot?323 these miniature surface mount mosfets reduce power loss conserve energy, making this device ideal for use in small power management circuitry. typical applications are dc?dc converters, load switching, power management in portable and battery?powered products such as computers, printers, cellular and cordless telephones. ? energy efficient ? miniature sot?323 surface mount package saves board space symbol value unit drain?to?source voltage v dss 50 v dc gate?to?source voltage ? continuous v gs 20 v dc drain current ? continuous @ t a = 25 c ? pulsed drain current (t p 10 s) i d i dm 130 520 ma total power dissipation @ t a = 25 c p d 225 mw operating and storage temperature range t j ,t stg ? 55 to 150 c thermal resistance ? junction?to?ambient r ja 556 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c rating maximum ratings (t j = 25 c unless otherwise noted) 3 drain 1  - gate source marking diagram pd w w = work week ? pb-free package is available. device package shipping sot-323 10000/tape&reel ordering information LBSS84WT1G sot-323 3000/tape&reel LBSS84WT1G thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (note 3.) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate,(note 4.) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j, t stg ?
55 to +150 c
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 vdc, i d = 250 adc) v (br)dss 50 ? ? vdc zero gate voltage drain current (v ds = 25 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? ? ? 0.1 15 60 adc gate?body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 60 adc on characteristics (note 1.) gate?source threaded voltage (v ds = v gs , i d = 1.0 madc) v gs(th) 0.8 ? 2.0 vdc static drain?to?source on?resistance (v gs = 5.0 vdc, i d = 100 madc) r ds(on) ? 5.0 10 ohms transfer admittance (v ds = 25 vdc, i d = 100 madc, f = 1.0 khz) |y fs | 50 ? ? ms dynamic characteristics input capacitance (v ds = 5.0 vdc) c iss ? 30 ? pf output capacitance (v ds = 5.0 vdc) c oss ? 10 ? transfer capacitance (v dg = 5.0 vdc) c rss ? 5.0 ? switching characteristics (note 2.) turn?on delay time t d(on) ? 2.5 ? ns rise time (v dd = ?15 vdc, i d = ?2.5 adc, t r ? 1.0 ? turn?off delay time (v dd 15 vdc , i d 2 . 5 adc , r l = 50 ? ) t d(off) ? 16 ? fall time t f ? 8.0 ? gate charge q t ? 6000 ? pc source?drain diode characteristics continuous current i s ? ? 0.130 a pulsed current i sm ? ? 0.520 forward voltage (note 2.) v sd ? 2.5 ? v 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. typical electrical characteristics       figure 1. transfer characteristics     

  
    
   figure 2. on?region characteristics 
               

 
  

  
           !   !                   "    2/4 leshan radio company, ltd. LBSS84WT1G


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  & figure 3. on?resistance versus drain current        figure 4. on?resistance versus drain current

  
  figure 5. on?resistance variation with temperature   " "  

   figure 6. gate charge            
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           !   !  typical electrical characteristics     


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  figure 7. body diode forward voltage


 
   "                3/4 leshan radio company, ltd. LBSS84WT1G
4/4 leshan radio company, ltd. LBSS84WT1G sc?70 (sot?323) a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028  mm inches  scale 10:1 xx m xx = specific device code m = date code  = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a  o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref
reel dimensions metric dimensions govern ?? english are in parentheses for reference only embossed tape and reel data for discretes a t max outside dimension measured at edge g inside dimension measured near hub 20.2mm min (.795??) 1.5mm min (.06??) 13.0mm 0.5mm (.512 .002??) 50mm min (1.969??) full radius size a max g t max 8 mm 12mm 16mm 24 mm 330mm (12.992??) 330mm (12.992??) 360mm (14.173??) 360mm (14.173??) 8.4mm+1.5mm, -0.0 (.33??+.059??, -0.00) 12.4mm+2.0mm, -0.0 (.49 ??+ .079??, -0.00) 16.4mm+2.0mm, -0.0 (.646??+.078??, -0.00) 24.4mm+2.0mm, -0.0 (.961??+.070??, -0.00) 14.4mm (.56??) 18.4mm (.72??) 22.4mm (.882??) 30.4mm (1.197??) leshan radio comp any , ltd. storage conditions temperature: 5 to 40 deg.c (20 to 30 deg. c is preferred) humidity: 30 to 80 rh (40 to 60 is preferred ) recommended period: one year after manufacturing (this recommended period is for the soldering condition only. the characteristics and reliabilities of the products are not restricted to this limitation)
shi p ment s p ecification 10 reel 12 inner box/carton 360kpcs/carton dim(unit:mm) dim(unit:mm) 10reel/inner box 30kpcs/inner box label cpn label label label ????? leshan radi o com p an y, ltd. mark 195mm*195mm*150mm 460mm*400mm*420mm 8000pcs/reel (sot-723,sod-723) 3000pcs/reel 80kpcs/inner box (sot-723,sod-723) 960kpcs/carton (sot-723,sod-723) leshan radio comp any , ltd.


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